SI7108DN-T1-E3
Mfr: vishay/siliconix
|
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 |
3000 |
|
SI7322DN-T1-E3
Mfr: vishay/siliconix
|
N-Channel 100 V 58 mO 13 nC TrenchFET Power Mosfet- PowerPAK 1212-8 |
3000 |
|
SI7439DP-T1-E3
Mfr: vishay/siliconix
|
Single P-Channel 150 V 0.09 Ohms Surface Mount Power Mosfet - PowerPAK SO-8 |
3000 |
|
SIR882DP-T1-GE3
Mfr: vishay/siliconix
|
SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8 |
3000 |
|
SIS402DN-T1-GE3
Mfr: vishay/siliconix
|
Single N-Channel 30 V 0.006 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 |
3000 |
|
SCT2H12NZGC11
Mfr: rohm semiconductor
|
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM |
2880 |
|
MSC360SMA120B
Mfr: microchip
|
MOSFET SIC 1200 V 360 mOhm TO-247. - SiC Discrete Product Line |
2750 |
|
SIHB12N60E-GE3
Mfr: vishay/siliconix
|
E-Series N-Channel 600 V 147 W 0.38 O 58 nC Surface Mount Power Mosfet - D2PAK |
2500 |
|
IRF1310NPBF
Mfr: infineon
|
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3 |
2000 |
|
IRFB4227PBF
Mfr: infineon
|
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3 |
2000 |
|
IRFB4310ZPBF
Mfr: infineon
|
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 |
2000 |
|
ZVN4206GVTA
Mfr: diodes inc.
|
ZVN4206G Series 60 V 1 Ohm N-Channel Enhancement Mode Vertical DMOS FET SOT-223 |
2000 |
|
ZVN4310GTA
Mfr: diodes inc.
|
ZVN4310G 100 V 0.54 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-223 |
2000 |
|
ZVNL120GTA
Mfr: diodes inc.
|
ZVNL120G Series 200V 10 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223 |
2000 |
|
STP4NK60ZFP
Mfr: st microelectronics
|
N-Channel 600 V 2 Ohm SuperMESH Power MosFet - TO-220FP |
1988 |
|
SIHD7N60E-GE3
Mfr: vishay
|
|
1950 |
|
SiHP22N60E-GE3
Mfr: vishay
|
|
1900 |
|
STP12NK80Z
Mfr: st microelectronics
|
TO-220/Zener-Protected SuperMESH PMOS 800V 0.75OHM 10.5A |
1900 |
|
PHB32N06LT,118
Mfr: nexperia
|
PHB32N06LT Series 60 V 34 A N-Channel TrenchMOS Logic Level FET - D2PAK-3 |
1600 |
|
PSMN3R8-100BS,118
Mfr: nexperia
|
PSMN3R8 Series 100 V 3.9 mOhm N-Channel Standard Level MOSFET - D2PAK-3 |
1600 |
|
MSC090SMA070S
Mfr: microchip
|
MOSFET SIC 700 V 90 mOhm TO-268. - SiC Discrete Product Line |
1500 |
|
ZVP2110GTA
Mfr: diodes inc.
|
ZVP2110G Series 100 V 8 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223 |
1500 |
|
MSC180SMA120S
Mfr: microchip
|
MOSFET SIC 1200 V 180 mOhm TO-268. - SiC Discrete Product Line |
1440 |
|
IRF840ASPBF
Mfr: vishay/siliconix
|
Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3 |
1400 |
|
MSC015SMA070S
Mfr: microchip
|
MOSFET SIC 700 V 15 mOhm TO-268. - SiC Discrete Product Line |
1380 |
|
MSC060SMA070S
Mfr: microchip
|
MOSFET SIC 700 V 60 mOhm TO-268. - SiC Discrete Product Line |
1080 |
|
MSC060SMA070B4
Mfr: microchip
|
MOSFET SIC 700 V 60 mOhm TO-247-4. - SiC Discrete Product Line |
1060 |
|
DMP2008UFG-7
Mfr: diodes inc.
|
DMP2008UFG Series 20 V 8 mOhm P-Channel Enhancement Mode Mosfet - POWERDI3333-8 |
1000 |
|
IRF9540NPBF
Mfr: infineon
|
Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 |
1000 |
|
IRFB4410PBF
Mfr: infineon
|
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 |
1000 |
|
IRLZ34NPBF
Mfr: infineon
|
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3 |
1000 |
|
SIHP12N60E-GE3
Mfr: vishay/siliconix
|
E-Series N-Channel 600 V 147 W 0.38 O 58 nC Flange Mount Power Mosfet - TO-220AB |
1000 |
|
MSC080SMA120J
Mfr: microchip
|
MOSFET SIC 1200 V 80 mOhm SOT-227. - SiC Discrete Product Line |
820 |
|
IRFP90N20DPBF
Mfr: infineon
|
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC |
800 |
|
IRFZ44NSTRLPBF
Mfr: infineon
|
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - D2PAK |
800 |
|
SIHG73N60E-GE3
Mfr: vishay/siliconix
|
|
800 |
|
MSC750SMA170B4
Mfr: microchip
|
MOSFET SIC 1700 V 750 mOhm TO-247-4. - SiC Discrete Product Line |
720 |
|
SI4466DY
Mfr: vishay/siliconix
|
Power Field-Effect Transistor, 9.5AI(D),20V,0.009ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
706 |
|
STP20N65M5
Mfr: st microelectronics
|
TO220/N-channel 650 V, 0.160 O typ., 18 A MDmesh V Power MOSFET |
700 |
|
DMP3160L-7
Mfr: diodes inc.
|
Power Field-Effect Transistor, 2.7AI(D),20V,0.122ohm, 1-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET |
698 |
|
MTD20N03HDLT4
Mfr: on semiconductor
|
Power Field-Effect Transistor, 20AI(D),30V,0.04ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |
698 |
|
IRFR120PBF
Mfr: vishay/siliconix
|
Single N-Channel 100 V 0.27 Ohms Surface Mount Power Mosfet - TO-252 |
600 |
|
IPB100N08S2L-07
Mfr: infineon
|
Power Field-Effect Transistor, 100AI(D),75V,0.0087ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-263AB |
505 |
|
STP120NF10
Mfr: st microelectronics
|
N-Channel 100 V 10.5 mO STripFET II MosFet - TO-220 |
489 |
|
APT40M35JVR
Mfr: microchip
|
MOSFET MOS5 400 V 35 mOhm SOT-227. - Si Transistors Product Line |
457 |
|
IRF5210PBF
Mfr: international rectifier
|
Power Field-Effect Transistor, 40A I(D),100V,0.06ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
370 |
|
SCT3080ALGC11
Mfr: rohm semiconductor
|
SCT3080AL Series 650 V 30 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N |
360 |
|
STP11NM60
Mfr: st microelectronics
|
N-Channel 650 V 0.45 Ohm Flange Mount MDmesh™ Power MosFet - TO-220 |
300 |
|
NDP7060
Mfr: national semiconductor
|
TRANSISTORS |
260 |
|
IPW65R080CFDAFKSA1
Mfr: infineon
|
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3 |
240 |
|
SiHG30N60E-GE3
Mfr: vishay
|
Power Field-Effect Transistor, 29A I(D), 600V,0.125ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-247AC |
225 |
|
MSC025SMA120B
Mfr: microchip
|
MOSFET SIC 1200 V 25 mOhm TO-247. - SiC Discrete Product Line |
210 |
|
SCT3160KLGC11
Mfr: rohm semiconductor
|
SCT3160KL Series 1200 V 17 A 208 mOhm N-Channel SiC Power Mosfet - TO-247N |
210 |
|
MSC015SMA070B4
Mfr: microchip
|
MOSFET SIC 700 V 15 mOhm TO-247-4. - SiC Discrete Product Line |
190 |
|
IRFR3910TRLPBF
Mfr: infineon
|
|
128 |
|
NTD3055L170-1G
Mfr: on semiconductor
|
Power Field-Effect Transistor, 9A I(D),60V,0.17ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |
118 |
|
IRFPG40PBF
Mfr: vishay/siliconix
|
IRFPG40 Series 1000 V 4.3 A 3.5 Ohm Flange Mount N-Channel Power Mosfet TO-247AC |
100 |
|
MSC750SMA170B
Mfr: microchip
|
MOSFET SIC 1700 V 750 mOhm TO-247. - SiC Discrete Product Line |
90 |
|
STY60NM50
Mfr: st microelectronics
|
TO 247 MAX/9063P10 |
90 |
|
MSC40SM120JCU3
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line |
81 |
|
NTD3055L170
Mfr: on semiconductor
|
9A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET |
71 |
|
MSC750SMA170S
Mfr: microchip
|
MOSFET SIC 1700 V 750 mOhm TO-268. - SiC Discrete Product Line |
70 |
|
MSC025SMA120J
Mfr: microchip
|
MOSFET SIC 1200 V 25 mOhm SOT-227. - SiC Discrete Product Line |
50 |
|
IRF1010NPBF
Mfr: infineon
|
TRANSISTOR, FET GENERAL PURPOSE PWR |
45 |
|
MSC035SMA170B
Mfr: microchip
|
MOSFET SIC 1700 V 35 mOhm TO-247. - SiC Discrete Product Line |
42 |
|
NTD3055L170G
Mfr: on semiconductor
|
Power Field-Effect Transistor, 9A I(D),60V,0.17ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |
35 |
|
SI4953DY
Mfr: vishay/siliconix
|
Power Field-Effect Transistor, 4.9AI(D),30V,0.053ohm, 2-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET |
33 |
|
IRFPG40PBF
Mfr: vishay/siliconix
|
Power Field-Effect Transistor, 4.3AI(D),1000V,3.5ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-247AC |
30 |
|
MSC025SMA120B4
Mfr: microchip
|
MOSFET SIC 1200 V 25 mOhm TO-247-4. - SiC Discrete Product Line |
30 |
|
MSC040SMA120B4
Mfr: microchip
|
MOSFET SIC 1200 V 40 mOhm TO-247-4. - SiC Discrete Product Line |
30 |
|
MSCSM120AM03CT6LIAG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP6C LI. - SiC Modules Product Line |
30 |
|
SI7850DP-T1-E3
Mfr: vishay/siliconix
|
Power Field-Effect Transistor, 6.2AI(D),60V,0.022ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
29 |
|
IRF530NSTRLPBF
Mfr: international rectifier
|
Power Field-Effect Transistor, 17AI(D),100V,0.09ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |
26 |
|
IRFU120PBF
Mfr: vishay
|
SO-16 |
25 |
|
IRF5210STRLPBF
Mfr: international rectifier
|
|
19 |
|
STS7C4F30L
Mfr: st microelectronics
|
Power Field-Effect Transistor, 7AI(D),30V,0.026ohm, 2-Element, N-ChannelandP-Channel,Silicon, Metal-oxide Semiconductor FET |
19 |
|
MSC40SM120JCU2
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line |
18 |
|
IRF3710PBF
Mfr: infineon
|
|
15 |
|
IRF4905SPBF
Mfr: infineon
|
Power Field-Effect Transistor, 42AI(D),55V,0.02ohm, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET |
15 |
|
JANTX2N6782
Mfr: international rectifier
|
Single N-Channel 100 V 15 W 6.5 nC Hexfet Transistor Through Hole - TO-39 |
15 |
|
MSC100SM70JCU2
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line |
14 |
|
JANTXV2N6766
Mfr: international rectifier
|
|
13 |
|
MSC70SM120JCU2
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line |
13 |
|
MSCSM120AM16CT1AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP1F. - SiC Modules Product Line |
12 |
|
MSCSM120AM042CT6AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP6C. - SiC Modules Product Line |
11 |
|
IRF7313PBF
Mfr: international rectifier
|
Power Field-Effect Transistor, 6.5AI(D),30V,0.029ohm, 2-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA |
10 |
|
IRFP4468PBF
Mfr: international rectifier
|
Kinetis K64 Series 512 kB Flash 192 kB RAM 32-Bit SMT Microcontroller - LQFP-144 |
10 |
|
STD10P6F6
Mfr: st microelectronics
|
P-Channel 60 V 160 mO 6.4 nC SMT STripFET VI DeepGATE Mosfet -TO-252 |
10 |
|
CHT-NMOS8005-TO254-T
Mfr: cissoid
|
High Voltage N-Channel Mid-Power MOSFET 80 V7.5ATO-254 |
8 |
|
MSCSM120HM50CT3AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP3F. - SiC Modules Product Line |
8 |
|
STB6NK90ZT4
Mfr: st microelectronics
|
Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3 |
8 |
|
IRFF9120
Mfr: international rectifier
|
Power Field-Effect Transistor, 4AI(D),100V,0.69ohm, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET, TO-205AF |
7 |
|
FMW30N60S1HF-S31PP-P2
Mfr: fuji
|
POWER, FET |
6 |
|
JANTX2N7236
Mfr: international rectifier
|
JANTX2N7236 Series 100 V 18 A Through Hole P-Channel Power Mosfet - TO-254AA |
4 |
|
MSCSM120HM31CT3AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP3F. - SiC Modules Product Line |
4 |
|
CHT-NMOS4005-TO254-T
Mfr: cissoid
|
High Temp N-Channel MOSFET 40 V 5 A TO-254 |
3 |
|
IRFF120
Mfr: irc
|
Power Field-Effect Transistor, 6AI(D),100V,0.35ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-205AF |
3 |
|
MSCSM120DAM11CT3AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP3F. - SiC Modules Product Line |
2 |
|
MSCSM70AM025CT6LIAG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP6C LI. - SiC Modules Product Line |
2 |
|
MSCSM70HM19CT3AG
Mfr: microchip
|
PM-MOSFET-SIC-SBD-SP3F. - SiC Modules Product Line |
2 |
|
description1
Mfr: manufacturer
|
ext_desc |
0 |
|