Semiconductors > Transistors > Power Field-Effect Transistors

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Case Connection DRAIN DRAIN SOURCE ISOLATED

Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES, 2 ELEMENTS WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Feedback Cap-Max (Crss) 10 50

FET Technology METAL-OXIDE SEMICONDUCTOR

JESD-609 Code e0 e1 e2 e3 e4 e6

Moisture Sensitivity Level 1 2 3 NOT APPLICABLE

Number of Elements 1 2 4

Operating Mode DEPLETION MODE ENHANCEMENT MODE

Operating Temperature-Max 150 155 175 185 200

Package Body Material CERAMIC, METAL-SEALED COFIRED METAL PLASTIC/EPOXY UNSPECIFIED

Package Shape RECTANGULAR ROUND SQUARE

Package Style CHIP CARRIER CYLINDRICAL FLANGE MOUNT FLATPACK GRID ARRAY IN-LINE SMALL OUTLINE

Peak Reflow Temperature (Cel) 225 235 240 245 250 260 NOT APPLICABLE NOT SPECIFIED

Polarity/Channel Type N-CHANNEL N-CHANNEL AND P-CHANNEL P-CHANNEL

Power Dissipation Ambient-Max 1.5 100 2 2.5 325

Qualification Status Not Qualified Qualified

Sub Category FET General Purpose Power FET General Purpose Powers Other Transistors

Surface Mount NO YES

Terminal Form C BEND FLAT GULL WING NO LEAD PIN/PEG THROUGH-HOLE UNSPECIFIED WIRE

Terminal Position BOTTOM DUAL SINGLE UPPER

Time@Peak Reflow Temperature-Max (s) 10 30 40 NOT APPLICABLE NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON SILICON CARBIDE

Turn-off Time-Max (toff) 10

Turn-on Time-Max (ton) 10 180

Part Number	Description	In Stock
TP2502N8-G Mfr: microchip	MOSFET, P-CHANNEL ENHANCEMENT-MODE, -20V, 2.0 Ohm. - VHV ANALOG Product Line	4000
VP2450N8-G Mfr: microchip	MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 30 Ohm. - VHV ANALOG Product Line	4000
VP3203N8-G Mfr: microchip	MOSFET, P-CHANNEL ENHANCEMENT-MODE, -30V, 0.6 Ohm. - VHV ANALOG Product Line	4000
ZVNL120GTA Mfr: diodes inc.	ZVNL120G Series 200V 10 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223	4000
IRFP064NPBF Mfr: infineon	Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC	3800
MSC360SMA120B Mfr: microchip	MOSFET SIC 1200 V 360 mOhm TO-247. - SiC Discrete Product Line	3560
IRF2804PBF Mfr: infineon	Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET Power Mosfet - TO-220-3	3375
IRFZ34NPBF Mfr: infineon	Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3	3300
IRLZ34NSTRLPBF Mfr: infineon	Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK	3200
BUK7Y28-75B,115 Mfr: nexperia	BUK7Y28 Series 75 V 28 mOhm N-Channel TrenchMOS Standard Level FET - LFPAK	3000
BUK9Y104-100B,115 Mfr: nexperia	BUK9Y104 Series 100 V 104 mOhm 11 nC 59 W N-Channel Logic Level MOSFET - LFPAK-4	3000
IPB320N20N3GATMA1 Mfr: infineon	Single N-Channel 200 V 32 mOhm 29 nC OptiMOS™ Power Mosfet - D2PAK-3	3000
IRF630PBF Mfr: vishay/siliconix	Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)	3000
IRFB4310ZPBF Mfr: infineon	Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3	3000
PSMN012-100YS,115 Mfr: nexperia	PSMN012 Series 100 V 12 mOhm 64 nC SMT N-Channel Standard Level MOSFET - LFPAK	3000
PSMN039-100YS,115 Mfr: nexperia	PSMN039 Series 100 V 39.5 mOhm 74 mW N-Channel Standard Level MOSFET - SOT-669	3000
PSMN0R9-25YLC,115 Mfr: nexperia	PSMN0R9 Series 25 V 1.25 mOhm 51 nC SMT N-Channel Logic Level MOSFET - LFPAK-56	3000
PSMN1R5-30YLC,115 Mfr: nexperia		3000
PSMN2R6-40YS,115 Mfr: nexperia	PSMN2R6 Series 40 V 5.3 mOhm 63 nC N-Channel Logic Level MOSFET - LFPAK-4	3000
PSMN4R0-40YS,115 Mfr: nexperia	PSMN4R0 Series 40 V 4.2 mOhm 38 nC SMT N-Channel Logic Level MOSFET - LFPAK-4	3000
SCT2H12NZGC11 Mfr: rohm semiconductor	SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM	2820
IRFZ48NPBF Mfr: infineon	Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3	2700
IRF9Z24NPBF Mfr: infineon	Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-220-3	2550
SIHD7N60E-GE3 Mfr: vishay		2475
SiHP22N60E-GE3 Mfr: vishay		2350
IPW60R070C6FKSA1 Mfr: infineon	Single N-Channel 600 V 70 mOhm 170 nC CoolMOS™ Power Mosfet - TO-247-3	2345
MSC750SMA170B Mfr: microchip	MOSFET SIC 1700 V 750 mOhm TO-247. - SiC Discrete Product Line	2190
IRFB4227PBF Mfr: infineon	Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3	2000
IRFR220NTRPBF Mfr: infineon	Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA	2000
ZVN4206GTA Mfr: diodes inc.	ZVN4206G Series 60 V 1 Ohm N-Channel Enhancement Mode Vertical DMOS FET -SOT-223	2000
ZVP2106GTA Mfr: diodes inc.	ZVP2106G Series 60 V 5 Ohm P-Channel Enhancement Mode Vertical DMOS FET -SOT-223	2000
ZXMP6A17GTA Mfr: diodes inc.	ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223	2000
STP4NK60ZFP Mfr: st microelectronics	N-Channel 600 V 2 Ohm SuperMESH Power MosFet - TO-220FP	1988
STP12NK80Z Mfr: st microelectronics	TO-220/Zener-Protected SuperMESH PMOS 800V 0.75OHM 10.5A	1900
IPP041N12N3GXKSA1 Mfr: infineon	Single N-Channel 120 V 4.1 mOhm 158 nC OptiMOS™ Power Mosfet - TO-220-3	1650
IRF640NSTRLPBF Mfr: infineon	Single N-Channel 200V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK	1600
PHB32N06LT,118 Mfr: nexperia	PHB32N06LT Series 60 V 34 A N-Channel TrenchMOS Logic Level FET - D2PAK-3	1600
PSMN3R8-100BS,118 Mfr: nexperia	PSMN3R8 Series 100 V 3.9 mOhm N-Channel Standard Level MOSFET - D2PAK-3	1600
IRF3415PBF Mfr: infineon	Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3	1550
IRFZ24NPBF Mfr: infineon	Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3	1500
IRLB4030PBF Mfr: infineon	Single N-Channel 100 V 4.5 mOhm 87 nC 3HEXFET® Power Mosfet - TO-220-3	1500
ZVP2110GTA Mfr: diodes inc.	ZVP2110G Series 100 V 8 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223	1500
MSC180SMA120S Mfr: microchip	MOSFET SIC 1200 V 180 mOhm TO-268. - SiC Discrete Product Line	1440
MSC090SMA070S Mfr: microchip	MOSFET SIC 700 V 90 mOhm TO-268. - SiC Discrete Product Line	1380
IPP200N15N3GXKSA1 Mfr: infineon	TO220-3/N-KANAL POWER MOS	1300
MSC060SMA070B4 Mfr: microchip	MOSFET SIC 700 V 60 mOhm TO-247-4. - SiC Discrete Product Line	1060
MSC060SMA070S Mfr: microchip	MOSFET SIC 700 V 60 mOhm TO-268. - SiC Discrete Product Line	1020
DMP2008UFG-7 Mfr: diodes inc.	DMP2008UFG Series 20 V 8 mOhm P-Channel Enhancement Mode Mosfet - POWERDI3333-8	1000
MSC015SMA070S Mfr: microchip	MOSFET SIC 700 V 15 mOhm TO-268. - SiC Discrete Product Line	990
MSC080SMA120J Mfr: microchip	MOSFET SIC 1200 V 80 mOhm SOT-227. - SiC Discrete Product Line	820
IRFP140NPBF Mfr: infineon	Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC	800
IRFP3710PBF Mfr: infineon	Single N-Channel 100 V 0.025 Ohm 190 nC HEXFET® Power Mosfet - TO-247-3AC	800
SI4466DY Mfr: vishay/siliconix	Power Field-Effect Transistor, 9.5AI(D),20V,0.009ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET	706
STP20N65M5 Mfr: st microelectronics	TO220/N-channel 650 V, 0.160 O typ., 18 A MDmesh V Power MOSFET	700
DMP3160L-7 Mfr: diodes inc.	Power Field-Effect Transistor, 2.7AI(D),20V,0.122ohm, 1-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET	698
MTD20N03HDLT4 Mfr: on semiconductor	Power Field-Effect Transistor, 20AI(D),30V,0.04ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET	698
IPW65R070C6FKSA1 Mfr: infineon	Single N-Channel 650 V 70 mOhm 170 nC CoolMOS™ Power Mosfet - TO-247-3	660
IRFP90N20DPBF Mfr: infineon	Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC	600
MSC750SMA170B4 Mfr: microchip	MOSFET SIC 1700 V 750 mOhm TO-247-4. - SiC Discrete Product Line	570
IPB100N08S2L-07 Mfr: infineon	Power Field-Effect Transistor, 100AI(D),75V,0.0087ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-263AB	505
STP120NF10 Mfr: st microelectronics	N-Channel 100 V 10.5 mO STripFET II MosFet - TO-220	489
APT40M35JVR Mfr: microchip	MOSFET MOS5 400 V 35 mOhm SOT-227. - Si Transistors Product Line	457
IRF840ASPBF Mfr: vishay/siliconix	Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3	450
MSC025SMA120B4 Mfr: microchip	MOSFET SIC 1200 V 25 mOhm TO-247-4. - SiC Discrete Product Line	450
SIHG73N60E-GE3 Mfr: vishay/siliconix		400
IRF5210PBF Mfr: international rectifier	Power Field-Effect Transistor, 40A I(D),100V,0.06ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB	370
STP11NM60 Mfr: st microelectronics	N-Channel 650 V 0.45 Ohm Flange Mount MDmesh™ Power MosFet - TO-220	300
SiHG30N60E-GE3 Mfr: vishay	Power Field-Effect Transistor, 29A I(D), 600V,0.125ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-247AC	275
NDP7060 Mfr: national semiconductor	TRANSISTORS	260
IPW65R080CFDAFKSA1 Mfr: infineon	Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3	240
MSC025SMA120B Mfr: microchip	MOSFET SIC 1200 V 25 mOhm TO-247. - SiC Discrete Product Line	210
MSC015SMA070B4 Mfr: microchip	MOSFET SIC 700 V 15 mOhm TO-247-4. - SiC Discrete Product Line	130
IRFR3910TRLPBF Mfr: infineon		128
NTD3055L170-1G Mfr: on semiconductor	Power Field-Effect Transistor, 9A I(D),60V,0.17ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET	118
IRFPG40PBF Mfr: vishay/siliconix	IRFPG40 Series 1000 V 4.3 A 3.5 Ohm Flange Mount N-Channel Power Mosfet TO-247AC	100
STY60NM50 Mfr: st microelectronics	TO 247 MAX/9063P10	90
NTD3055L170 Mfr: on semiconductor	9A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET	71
MSC750SMA170S Mfr: microchip	MOSFET SIC 1700 V 750 mOhm TO-268. - SiC Discrete Product Line	70
MSC060SMA070B Mfr: microchip	MOSFET SIC 700 V 60 mOhm TO-247. - SiC Discrete Product Line	60
MSC025SMA120J Mfr: microchip	MOSFET SIC 1200 V 25 mOhm SOT-227. - SiC Discrete Product Line	50
IRF1010NPBF Mfr: infineon	TRANSISTOR, FET GENERAL PURPOSE PWR	45
MSC035SMA170B Mfr: microchip	MOSFET SIC 1700 V 35 mOhm TO-247. - SiC Discrete Product Line	42
NTD3055L170G Mfr: on semiconductor	Power Field-Effect Transistor, 9A I(D),60V,0.17ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET	35
SI4953DY Mfr: vishay/siliconix	Power Field-Effect Transistor, 4.9AI(D),30V,0.053ohm, 2-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET	33
IRFPG40PBF Mfr: vishay/siliconix	Power Field-Effect Transistor, 4.3AI(D),1000V,3.5ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-247AC	30
MSC040SMA120B4 Mfr: microchip	MOSFET SIC 1200 V 40 mOhm TO-247-4. - SiC Discrete Product Line	30
SI7850DP-T1-E3 Mfr: vishay/siliconix	Power Field-Effect Transistor, 6.2AI(D),60V,0.022ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET	29
IRF530NSTRLPBF Mfr: international rectifier	Power Field-Effect Transistor, 17AI(D),100V,0.09ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET	26
IRFU120PBF Mfr: vishay	SO-16	25
APT8030B2VRG Mfr: microchip	MOSFET MOS5 800 V 30 Ohm TO-247 MAX. - Si Transistors Product Line	20
IRF5210STRLPBF Mfr: international rectifier		19
STS7C4F30L Mfr: st microelectronics	Power Field-Effect Transistor, 7AI(D),30V,0.026ohm, 2-Element, N-ChannelandP-Channel,Silicon, Metal-oxide Semiconductor FET	19
MSC40SM120JCU2 Mfr: microchip	PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line	18
IRF3710PBF Mfr: infineon		15
IRF4905SPBF Mfr: infineon	Power Field-Effect Transistor, 42AI(D),55V,0.02ohm, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET	15
JANTX2N6782 Mfr: international rectifier	Single N-Channel 100 V 15 W 6.5 nC Hexfet Transistor Through Hole - TO-39	15
MSC100SM70JCU2 Mfr: microchip	PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line	14
JANTXV2N6766 Mfr: international rectifier		13
MSC70SM120JCU2 Mfr: microchip	PM-MOSFET-SIC-SBD-SOT227. - SiC Modules Product Line	13
IRF7313PBF Mfr: international rectifier	Power Field-Effect Transistor, 6.5AI(D),30V,0.029ohm, 2-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA	10